THI F-(5)-6 3D Four- Three- Two-Photon and Multi-Harmonic Microscopy of Lateral-Over-Grown GaN
نویسندگان
چکیده
Taking advantage of strong 4-photon absorption of l e v light in GaN samples, we demonstrated the fmt ever 4-photon microscopy using GaN material system. Combining with 3-photon fluorescence and second and third harmonic generation microscopies, we studied a lateral overgrown GaN sample with high 3D resolution. Complete information regarding the distribution of growth quality, defect state, and piezoelectric field in lateral-over-grown GaN can be obtained simultaneously through multi-photon (4 and 3) and multi-harmonic (3 and 2) microscopy based on a 1230-nm femtosecond Crforsterite laser. The samples under study include a bulk GaN layer with high q vergrowth ed lat (LEO) 111. (A) (B)
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